微機(jī)電器件設(shè)計(jì)、制造及計(jì)算機(jī)輔助設(shè)計(jì)/京航空航天“研究生英文教材”系列叢書 企業(yè)批量購書 分享 關(guān)注商品舉報(bào) 微機(jī)電器件設(shè)計(jì)、制造及計(jì)算機(jī)輔助設(shè)計(jì)
定 價(jià)：65 元
叢書名：京航空航天“研究生英文教材”系列叢書
- 作者：郭占社 著
- 出版時(shí)間：2016/6/1
- ISBN：9787512421097
- 出 版 社：北京航空航天大學(xué)出版社
- 中圖法分類：TN4
- 頁碼：
- 紙張：膠版紙
- 版次：1
- 開本：16K
Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．
Chapter1 Introduction ………………………………………………………………………… 1
1．1 ConceptofMEMS ……………………………………………………………………… 1
1．2 DevelopmentofMEMS ………………………………………………………………… 4
1．3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2．1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1 Introduction ……………………………………………………………………… 12
2．1．2 Operatingprinciples …………………………………………………………… 13
2．1．3 Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1 Introduction ……………………………………………………………………… 34
2．2．2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3 MembranetheoryofMEMS ………………………………………………………… 47
2．3．1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3．1 Monocrystallinesilicon ……………………………………………………………… 53
3．1．1 Introduction ……………………………………………………………………… 53
3．1．2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2 Polycrystallinesilicon ………………………………………………………………… 64
3．3 Silica …………………………………………………………………………………… 66
3．4 Piezoelectricmaterials ………………………………………………………………… 67
3．4．1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2 Quartzcrystal …………………………………………………………………… 68
3．4．3 Piezoelectricceramics …………………………………………………………… 73
3．5 OtherMEMSmaterials ……………………………………………………………… 75
3．6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4．1 MEMSlithographyprocess ………………………………………………………… 78
4．2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1 Wafercleaning …………………………………………………………………… 80
4．2．2 Siliconoxidation ………………………………………………………………… 80
4．2．3 Spincoatingprocess …………………………………………………………… 87
4．2．4 Prebaking ………………………………………………………………………… 90
4．2．5 Exposure ………………………………………………………………………… 92
4．2．6 Development ……………………………………………………………………… 94
4．2．7 Hardening ………………………………………………………………………… 96
4．2．8 FabricationoftheSiO2 window ………………………………………………… 97
4．3 SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1 Bulksilicontechnology ………………………………………………………… 98
4．3．2 Surfacesiliconprocess ………………………………………………………… 103
4．3．3 LIGAtechnology ……………………………………………………………… 104
4．3．4 Sputteringtechnology ………………………………………………………… 105
4．3．5 LiftGoffprocess ………………………………………………………………… 107
4．4 Filmpreparationtechnology………………………………………………………… 107
4．5 Bondingprocess ……………………………………………………………………… 108
4．5．1 Anodicbondingprocess………………………………………………………… 109
4．5．2 SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3 Metaleutecticbonding ………………………………………………………… 113
4．5．4 Coldpressureweldingbonding ……………………………………………… 114
4．6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1 Introduction …………………………………………………………………… 115
4．6．2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5．1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2 MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1 Structureandworkingprinciple ……………………………………………… 141
5．3．2 Calculationofpertinenttheory ……………………………………………… 142
5．3．3 Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4 Testingresultsanddataanalysis……………………………………………… 152
5．3．5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1 Workingprinciple ……………………………………………………………… 177
6．2．2 DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3 Classificationofmicromechanicalgyroscope ………………………………… 188
6．3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1 Workingpincinple ……………………………………………………………… 190
6．3．2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4 MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1 Introduction …………………………………………………………………… 198
6．4．2 Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3 Theoreticalcalculation ………………………………………………………… 200
6．4．4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5 Experimentresultanddiscussion …………………………………………… 209
6．5 Microscopicmorphologytestingmethod ………………………………………… 211
6．6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1 Importantconceptsofthesoftware………………………………………………… 218
7．2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3 ThecoordinatesysteminAnsys …………………………………………………… 221
7．4 Engineeringexamples ……………………………………………………………… 226
7．4．1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4 Fatiguestrengthcalculationexample ………………………………………… 264
7．5 Summary ……………………………………………………………………………… 272
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